Abstract For the prototypical Ge/Si(001) system. we show that at high growth temperature a new type of Stranski-Krastanow islands is formed with side facets steeper than {111} and high aspect ratio. Nano-goniometric analysis of the island shapes reveals the presence of six new facet groups in addition to those previously found for dome or barn-shaped islands. Due to the highly multi-f... https://ashleyshomestores.shop/product-category/upholstered-king-bed/