An analytical subthreshold swing (SS) model has been presented to determine the SS of an elliptic junctionless gate-all-around field-effect transistor (GAA FET). The analysis of a GAA FET with an elliptic cross-section is essential because it is difficult to manufacture a GAA FET with an accurate circular cross-section during the process. The SS values obtained using the proposed SS m... https://www.projectorbiz.com/product-category/baking-pans/